Nanoelektronikaren xedeetako bat [[elektronika]] konbentzionalarekin egiten diren mikroprozesagailuak baino potentzia handiagokoak egitea da. Horretarako [[CMOS]] [[teknologia]]ko osagarrien ordez, [[nanolitografia]] modu berriak, [[nanohodi]]ak bezalako [[nanomaterial]]ak edota [[ate logiko molekular|molekula txikiak]] aztertzen ari dira. [[Eremu-efektuko transistore]]ak egin dituzte [[karbonozko nanohodi]]ak erabiliz.<ref>{{Cite journal |last=Postma |first=Henk W. Ch. |coauthors=Teepen, Tijs; Yao, Zhen; Grifoni, Milena & Dekker, Cees |title=[http://www.sciencemag.org/cgi/content/abstract/293/5527/76 Carbon nanotube single-electron transistors at room temperature] |journal=[[Science (journal)|Science]] |volume=293 |issue=5527 |year=2001 |pages=76–79 |doi=10.1126/science.1061797}}</ref> andeta with heterostructured semiconductorheteroestrukturadun [[nanowirenanohodi]]s erdieroaleak erabiliz.<ref>{{cite journal |last=Xiang |first=Jie |coauthors=Lu, Wei; Hu, Yongjie; Wu, Yue; Yan; Hao & Lieber, Charles M. |title=Ge/Si nanowire heterostructures as highperformance field-effect transistors |journal=[[Nature (journal)|Nature]] |volume=441 |pages=489–493 |year=2006 |doi=10.1038/nature04796}}</ref>
